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Transmissive Photosensors (Photo lnterrupters)
CNZ1021 (ON1021), CNZ1023 (ON1023), CNA1009H (ON1024)
Photo lnterrupter
For contactless SW, object detection Overview
CNZ1021, CNZ1023 and CNA1009H are a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.
Features
* Highly precise position detection: 0.25 mm * Gap width: 3 mm (CNZ1021, CNZ1023) 5 mm (CNA1009H) * The type directly attached to PCB ....... CNZ1021 Screw-fastened type (one side) ............ CNZ1023 The type directly attached to PCB ....... CNA1009H (with a positioning pins)
CNZ1023
Unit: mm
CNZ1021
Unit: mm
18.0
12.0
(2.5)
5.0
(2.5)
2.0 12.0
12.00.15 5.0 0.40.1 (4-R2) Device center 2.10.15 (C1.2) 2-R1.5 6.0 3.5 (2-0.45) (2.54) SEC. A-A'
3.00.15 A
0.40.1 Device center
2.10.15
(C1.2)
3.00.15 A
10.0
10.0
10.0 min.
10.0 min.
2.5
A' 3.0-0 (2-0.45) (7.6)
2.5
+0.15
A' (2-0.45) (7.6) (2-0.45) (2.54) SEC. A-A' 2 3
1
4
1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-001 Package Unit: mm
2
3
1
4
1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-003 Package
CNA1009H
14.0 5.00.15
6.0 5.0 0.50.1 Device center (C1)
(2.5)
A
10.0
10.0 min.
2-0.7
2.5
A'
2-0.70.1 (2-0.45) (2-0.45) (2.54) SEC. A-A' 2 3 (10.0)
5.20.1
1 2.350.1
4 6.60.1
1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-004 Package
(Note) 1. Tolerance unless otherwise specified is 0.3 2. ( ) Dimension is reference
2.20.15
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004 SHG00017BED
3.0 -0
0.5
+0.15
1
CNZ1021, CNZ1023, CNA1009H
Absolute Maximum Ratings Ta = 25C
Parameter Input (Light Reverse emitting diode) voltage CNZ1021 CNZ1023 CNA1009H Forward current Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation *2 Temperature Operating ambient temperature Storage temperature IF PD VCEO VECO IC PC Topr Tstg Symbol VR Rating 3 3 5 50 75 30 5 20 100 -25 to +85 -40 to +100 mA mW V V mA mW C C Unit V
Note) *1: Input power derating ratio is 1.0 mW/C at Ta 25C. *2: Output power derating ratio is 1.33 mW/C at Ta 25C.
Electrical-Optical Characteristics Ta = 25C 3C
Parameter Forward voltage Input characteristics Reverse current Output Collector-emitter cutoff current characteristics (Base open) Symbol VF IR ICEO IF = 20 mA VR = 3 V VCE = 10 V VCC = 5 V, IF = 20 mA, RL = 100 IF = 40 mA, IC = 1 mA VCC = 5 V, IC = 1 mA RL = 100 5 5 0.5 10 Conditions Min Typ 1.25 Max 1.40 10 200 15.0 0.4 Unit V A nA mA V s s
Collector current IC Transfer characteristics Collector-emitter saturation voltage VCE(sat) Rise time
*
tr tf
Fall time *
Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit
Sig. in VCC (Input pulse) (Output pulse) tr tf 90% 10% tr : Rise time tf : Fall time
50
Sig. out RL
2
SHG00017BED
CNZ1021, CNZ1023, CNA1009H
IF , I C T a
60 60 IF 50 50
IF V F
Ta = 25C 1.6
VF T a
IF = 50 mA
Forward current IF , collector current IC (mA)
Forward current IF (mA)
Forward voltage VF (V)
1.2 10 mA 1 mA 0.8
40
40
30 IC 20
30
20
0.4
10
10
0 -25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0 -40
0
40
80
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC I F
102 VCE = 5 V Ta = 25C 102
IC VCE
160 Ta = 25C IF = 30 mA 20 mA 10 mA
IC Ta
VCE = 5 V IF = 20 mA
Collector current IC (mA)
Collector current IC (mA)
10
10
Relative collector current IC (%)
102
120
1
1
80
10 -1
10 -1
40
10 -2 10 -1
1
10
102
10 -2 10 -1
1
10
0 -40
0
40
80
Forward current IF (mA)
Collector-emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO Ta
Collector-emitter cutoff current (Base open) ICEO (A)
103 VCE = 10 V 102
tr I C
VCC = 5 V Ta = 25C 100
IC d
VCE = 5 V Ta = 25C IF = 20 mA Criterion 0 d 60
102 10
Relative collector current IC (%)
102
RL = 1 k 500 100
80
10
Rise time tr (s)
1
1
40
10 -1 10 -1
20
10 -2 -40
0
40
80
10 -2 10 -1
1
10
0
0
1
2
3
4
5
6
Ambient temperature Ta (C )
Collector current IC (mA)
Distance d (mm)
SHG00017BED
3
Caution for Safety
This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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